The four day “ 2nd International Symposium on Modeling of Crystal Growth Processes and Devices” is highly beneficial for the researchers who are working in the field of modeling and simulation
of various crystal growth processes, semiconductor devices, NLO and Piezoelectric devices. The development of modern devices requires materials with a high degree of crystallographic perfection,
low defect density and uniform dopant distribution throughout the crystals. Numerical modeling plays a vital role in developing optimised process conditions for growing high quality crystals and
designing device structures for efficient electronic and optoelectronic devices. The ultimate goal of the symposium is to give a basic understanding for the young researchers to explore the advance
developments of modeling on crystal growth processes and devices, to evolve guidelines for their further research. The symposium includes Keynote/ Invited lectures by eminent experts from various
foreign and Indian institutions, poster & oral presentations from the researchers.